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1

Photoluminescence characterization of rare-earth (Er, Yb)-doped InP grown by metalorganic chemical vapor deposition

Kenichiro Takahei, Kunihiko Uwai, Hiroshi Nakagome

Journal:

Journal of Luminescence

Year:

1988

Language:

english

File:

PDF, 1.48 MB

english, 1988

2

Luminescence lifetime studies of Nd-doped GaP and GaAs

Moriyuki Taniguchi, Hiroshi Nakagome, Kenichiro Takahei

Journal:

Journal of Luminescence

Year:

1992

Language:

english

File:

PDF, 578 KB

english, 1992

3

Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3

Kunihiko Uwai, Hiroshi Nakagome, Kenichiro Takahei

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 478 KB

english, 1988

4

Photoluminescence characterization of Nd-doped GaP grown by metalorganic chemical vapor deposition

Takahei, Kenichiro, Nakagome, Hiroshi

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 866 KB

english, 1992

5

Thermal quenching mechanism of Yb intra-4f-shell luminescence in InP

Taguchi, Akihito, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 706 KB

english, 1991

6

Multiphonon-assisted energy transfer between Yb 4f shell and InP host

Taguchi, Akihito, Takahei, Kenichiro, Horikoshi, Yoshiji

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.23 MB

english, 1994

7

Yb-doped InP grown by metalorganic chemical vapor deposition

Uwai, Kunihiko, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 605 KB

english, 1987

8

Erbium in Si: Estimation of energy transfer rate and trap depth from temperature dependence of intra-4f-shell luminescence

Taguchi, Akihito, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

9

Structural analysis of erbium sheet-doped GaAs grown by molecular-beam epitaxy, with ion channeling followed by Monte Carlo simulation

Nakata, Jyoji, Jourdan, Nicolas, Yamaguchi, Hiroshi, Takahei, Kenichiro, Yamamoto, Yasuich, Kido, Yoshiaki

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.68 MB

english, 1995

10

An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition

Yamamoto, Norio, Uwai, Kunihiko, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 737 KB

english, 1989

11

Trap level characteristics of rare-earth luminescence centers in III–V semiconductors

Taguchi, Akihito, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 305 KB

english, 1996

12

Er luminescence centers in GaAs grown by migration-enhanced epitaxy

Taguchi, Akihito, Kawashima, Minoru, Takahei, Kenichiro, Horikoshi, Yoshiji

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 610 KB

english, 1993

13

Optically enhanced oxidation of III-V compound semiconductors

Fukuda, Mitsuo, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1985

Language:

english

File:

PDF, 701 KB

english, 1985

14

Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor deposition

Nakagome, Hiroshi, Uwai, Kunihiko, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 560 KB

english, 1988

15

Optical properties of the dominant Nd center in GaP

Taniguchi, Moriyuki, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 799 KB

english, 1993

16

Direct determination of impact-parameter-dependent stopping powers for million-electron-volt He ions penetrating Er-doped GaAs

Yamamoto, Yasukazu, Kaczanowski, Jan, Kido, Yoshiaki, Nakata, Jyoji, Yamaguchi, Hiroshi, Takahei, Kenichiro

Journal:

Physical Review A

Year:

1996

Language:

english

File:

PDF, 507 KB

english, 1996

17

Photoluminescence analysis of Er-doped GaAs under host photoexcitation and direct intra-4f-shell photoexcitation

Takahei, Kenichiro, Taguchi, Akihito

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 839 KB

english, 1995

18

Identification of acceptors and donors in high-purity InP grown by metalorganic chemical vapor deposition

Uwai, Kunihiko, Yamada, Syoji, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 499 KB

english, 1987

19

Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition-grown GaAs:Er

Nakata, Jyoji, Taniguchi, Moriyuki, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 609 KB

english, 1992

20

Optical and electrical properties of ytterbium-doped GaAs grown by metalorganic chemical vapor deposition

Taguchi, Akihito, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 759 KB

english, 1990

21

Temperature dependence of intra-4f-shell photo- and electroluminescence spectra for erbium-doped GaAs

Takahei, Kenichiro, Whitney, Peter S., Nakagome, Hiroshi, Uwai, Kunihiko

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 654 KB

english, 1989

22

Direct verification of energy back transfer from Yb 4f-shell to InP host

Taguchi, Akihito, Taniguchi, Moriyuki, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 562 KB

english, 1992

23

Luminescence intensity and lifetime dependences on temperature for Nd-doped GaP and GaAs

Taniguchi, Moriyuki, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

24

Er-doped InP and GaAs grown by metalorganic chemical vapor deposition

Uwai, Kunihiko, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 392 KB

english, 1987

25

Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers

Noguchi, Yoshio, Takahei, Kenichiro, Suzuki, Yoshio, Nagai, Haruo

Journal:

Japanese Journal of Applied Physics

Year:

1980

File:

PDF, 487 KB

1980

26

InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region

Nagai, Haruo, Noguchi, Yoshio, Takahei, Kenichiro, Toyoshima, Yoshio, Iwane, Genzo

Journal:

Japanese Journal of Applied Physics

Year:

1980

File:

PDF, 418 KB

1980

27

Instability of In-Ga-As-P Liquid Solution during Low Temperature LPE of In 1- x Ga x As 1- y P y on InP

Takahei, Kenichiro, Nagai, Haruo

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 579 KB

1981

28

Observation of Luminescence from a Highly Concentrated Nd Center in GaP by Direct Optical Excitation and Comparison with Nd Centers Excited Under Host Excitation

Taniguchi, Moriyuki, Nakagome, Hiroshi, Takahei, Kenichiro

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 582 KB

1991

29

Efficient Er Luminescence Centers Formed in GaAs by Metalorganic Chemical Vapor Deposition with Oxygen Codoping

Takahei, Kenichiro, Taguchi, Akihito

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 556 KB

1994

30

Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors

Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 381 KB

1995

31

Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature

Takarabe, K., Mizushima, T., Minomura, S., Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 287 KB

1995

32

Er Centers in GaAs Studied by Optical Spectroscopy Under Hydrostatic Pressure

Hogg, R.A., Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 466 KB

1997

33

Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure

Takarabe, K., Minomura, S., Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 262 KB

1993

34

Energy Transfer in Rare-Earth-Doped III-V Semiconductors

Takahei, Kenichiro, Taguchi, Akihito

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 778 KB

1992

35

Characteristics of Er-Oxygen Complex Centers in GaAs

Takahei, Kenichiro, Horikoshi, Yoshiji, Taguchi, Akihito

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 419 KB

1995

36

Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP

Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1993

File:

PDF, 388 KB

1993

37

EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping

Tabuchi, M., Ofuchi, H., Kubo, T., Takahei, Kenichiro, Takeda, Yoshikazu

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 375 KB

1997

38

Energy Transfer Rate Between Erbium 4ƒ Shell and Si Host

Taguchi, Akihito, Takahei, Kenichiro, Matsuoka, Masaya, Tohno, S.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 463 KB

1997

39

Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room Temperature

Takarabe, K., Minomura, S., Taguchi, Akihito, Takahei, Kenichiro

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 320 KB

1994

40

Electron Spin Resonance of Er-Oxygen Complexes in GaAs

Ishiyama, T., Katayama, E., Takahei, Kenichiro, Taguchi, Akihito, Murakami, Kenji

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 409 KB

1997

41

1.5 µm Region BH Laser Array

Suzuki, Yoshio, Noguchi, Yoshio, Takahei, Kenichiro, Nagai, Haruo, Iwane, Genzo

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 821 KB

1981

42

Abnormality at the Interface of p-Type InP Grown by LPE

Nakano, Yoshinori, Takahei, Kenichiro, Noguchi, Yoshio, Nagai, Haruo, Nawata, Kiyoshi

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 449 KB

1981

43

Reflectivity Spectra of TlCl-TlBr Mixed Crystals

Takahei, Kenichiro, Kobayashi, Koichi

Journal:

Journal of the Physical Society of Japan

Year:

1977

File:

PDF, 993 KB

1977

44

Study of the Zeeman Effect of Er3+ in GaAs:Er,O

Haase, Dieter, Dörnen, Achim, Takahei, Kenichiro, Taguchi, Akihito

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996

45

Electronic Properties and Their Relations to Optical Properties in Rare Earth Doped III-V Semiconductors

Taguchi, Akihito, Takahei, Kenichiro, Nakata, Jyoji

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 712 KB

english, 1993

46

SPIE Proceedings [SPIE Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions - St. Petersburg, Russia (Monday 3 July 1995)] Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions - Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts

Taguchi, Akihito, Takahei, Kenichiro, Ryskin, Alexander I., Masterov, V. F.

Year:

1996

Language:

english

File:

PDF, 400 KB

english, 1996

47

Impurity-Induced Self-Trapping of Holes and Minority-Ion Percolation in TlCl–TlBr Mixed Crystals

Takahei, Kenichiro, Kobayashi, Koichi

Journal:

Journal of the Physical Society of Japan

Year:

1978

File:

PDF, 1.67 MB

1978